Undergraduate Course: Microelectronics 2 (ELEE08020)
Course Outline
| School | School of Engineering |
College | College of Science and Engineering |
| Course type | Standard |
Availability | Available to all students |
| Credit level (Normal year taken) | SCQF Level 8 (Year 2 Undergraduate) |
Credits | 10 |
| Home subject area | Electronics |
Other subject area | None |
| Course website |
None |
Taught in Gaelic? | No |
| Course description | The objective of the course is to introduce the concepts
underlying device operation and fabrication. Students will gain
an appreciation of the basic semiconductor properties relevant
to device operation and fabrication, and an understanding of
the operation of the pn junction diode and transistors,
together with their properties, such as I-V characteristics. |
Entry Requirements (not applicable to Visiting Students)
| Pre-requisites |
|
Co-requisites | |
| Prohibited Combinations | |
Other requirements | None |
| Additional Costs | None |
Information for Visiting Students
| Pre-requisites | None |
| Displayed in Visiting Students Prospectus? | No |
Course Delivery Information
|
| Delivery period: 2012/13 Semester 1, Available to all students (SV1)
|
WebCT enabled: Yes |
Quota: None |
| Location |
Activity |
Description |
Weeks |
Monday |
Tuesday |
Wednesday |
Thursday |
Friday |
| No Classes have been defined for this Course |
| First Class |
First class information not currently available |
| No Exam Information |
Summary of Intended Learning Outcomes
At the end of the course students should be able to:
1. Explain the origin of electron energy bands in solids and
how they affect the electrical properties of solids.
2. Describe the difference between intrinsic and extrinsic
semiconductors and how the electrical properties of the latter
are affected by doping.
3. Describe and explain how the resistivity or conductivity of
metals and semiconductors are affected by temperature.
4. Explain what is meant by recombination, electron-hole pair
generation, carrier lifetime, intrinsic carrier concentration,
mobility, scattering, degenerate semiconductors, drift velocity,
diffusion current, diffusion length and Fermi level.
5. Describe the fabrication, structure, principles of operation
and key properties (such as I-V characteristics) of devices such
as the p-n junction diode and MOS transistor.
6. Perform simple calculations, given appropriate formulae, to
determine a range of material properties (such as conductivity,
resistivity, doping concentrations, carrier mobilities) and device
properties (such as static and dynamic resistance, junction
capacitance and drain current). |
Assessment Information
| One 90 minute written exam worth 100% of final mark |
Special Arrangements
| None |
Additional Information
| Academic description |
Not entered |
| Syllabus |
Not entered |
| Transferable skills |
Not entered |
| Reading list |
Not entered |
| Study Abroad |
Not entered |
| Study Pattern |
Part 1: Semiconductor theory
Part 2: IC fabrication and the pn junction diode
Part 3: Transistors |
| Keywords | Semiconductor, devices, fabrication, transistors |
Contacts
| Course organiser | Dr Peter Ewen
Tel: (0131 6)50 5651
Email: |
Course secretary | Mrs Sharon Potter
Tel: (0131 6)51 7079
Email: |
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© Copyright 2012 The University of Edinburgh - 7 March 2012 5:59 am
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