Microelectronic Device Principles 4 (U00353)

? Credit Points : 10 ? SCQF Level : 10 ? Acronym : EEL-4-ELMDP

The aim of this course is to provide a basic understanding of the device physics and fabrication technology of a range of important microelectronic devices, including both bipolar and MOS structures. Particular attention is given to optoelectronic devices.

Entry Requirements

? Pre-requisites : Microelectronics 3

Subject Areas

Home subject area

Electronics, (School of Engineering and Electronics, Schedule M)

Delivery Information

? Normal year taken : 4th year

? Delivery Period : Semester 2 (Blocks 3-4)

? Contact Teaching Time : 3 hour(s) per week for 9 weeks

All of the following classes

Type	Day	Start	End	Area
Lecture	Monday	10:00	10:50	KB
Lecture	Wednesday	10:00	10:50	KB
Lecture	Thursday	10:00	10:50	KB

Summary of Intended Learning Outcomes

After successful completion of this course the student will be able to:
- perform bipolar device calculations using the Ebers-Moll equations;
- explain the effect of varying material properties on device performance;
- generate band diagrams for multi-layer device structures, in particular those incorporating heterojunctions;
- describe the main non-volatile memory technologies and explain their respective merits;
- explain the factors determining the efficiency of opto-electronic devices;
- describe the structure and mode of operation of CCD devices.